2SJ272 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ272
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO220ML
2SJ272 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ272 Datasheet (PDF)
1.1. 2sj272.pdf 
Size:92K _sanyo
Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ272] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.1. 2sj274.pdf Size:93K _sanyo
Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ274] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.2. 2sj277.pdf Size:97K _sanyo
Ordering number:EN4241 P-Channel Silicon MOSFET 2SJ277 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ277] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ277-applied equipment. Hig
5.3. 2sj276.pdf Size:94K _sanyo
Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ276] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ276- applied equipment. High-density surface m
5.4. 2sj275.pdf Size:97K _sanyo
Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ275] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ275-applied equipment. Hig
5.5. 2sj273.pdf Size:90K _sanyo
Ordering number:EN4748 P-Channel Silicon MOSFET 2SJ273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ273] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2
5.6. rej03g0856 2sj278ds.pdf Size:91K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
5.7. 2sj278.pdf Size:78K _renesas
2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 (Previous: ADE-208-1190) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A R (Package n
5.8. 2sj279.pdf Size:42K _hitachi
2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai
5.9. 2sj279l-s.pdf Size:43K _hitachi
2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai
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