2SJ273 MOSFET. Datasheet pdf. Equivalent

2SJ273 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ273 Datasheet (PDF)

1.1. 2sj273.pdf Size:90K _sanyo

Ordering number:EN4748 P-Channel Silicon MOSFET 2SJ273 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ273] � Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

5.1. 2sj275.pdf Size:97K _sanyo

Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SJ275] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SJ275-applied equipment. � Hig

5.2. 2sj276.pdf Size:94K _sanyo

Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2090A � Low-voltage drive. [2SJ276] � Surface mount type device making the following 10.2 4.5 1.3 possible. � Reduction in the assembling time for 2SJ276- applied equipment. � High-density surface m

 5.3. 2sj277.pdf Size:97K _sanyo

Ordering number:EN4241 P-Channel Silicon MOSFET 2SJ277 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SJ277] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SJ277-applied equipment. � Hig

5.4. 2sj274.pdf Size:93K _sanyo

Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ274] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 5.5. 2sj272.pdf Size:92K _sanyo

Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ272] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.6. 2sj278.pdf Size:78K _renesas

2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 (Previous: ADE-208-1190) Rev.2.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance � High speed switching � Low drive current � 4 V gate drive device can be driven from 5 V source � Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A R (Package n

5.7. rej03g0856 2sj278ds.pdf Size:91K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. 2sj279l-s.pdf Size:43K _hitachi

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

5.9. 2sj279.pdf Size:42K _hitachi

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

5.10. 2sj274.pdf Size:194K _inchange_semiconductor

isc P-Channel MOSFET Transistor 2SJ274 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

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