All MOSFET. 2SJ339 Datasheet

 

2SJ339 Datasheet and Replacement


   Type Designator: 2SJ339
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220ML
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2SJ339 Datasheet (PDF)

 ..1. Size:40K  sanyo
2sj339.pdf pdf_icon

2SJ339

Ordering number:ENN6396P-Channel Silicon MOSFET2SJ339Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A 4V drive.[2SJ339] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-220ML

 9.1. Size:112K  toshiba
2sj338.pdf pdf_icon

2SJ339

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS

 9.2. Size:427K  toshiba
2sj334.pdf pdf_icon

2SJ339

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 29 m (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode : Vth = -0

 9.3. Size:98K  sanyo
2sj337.pdf pdf_icon

2SJ339

Ordering number:EN4669P-Channel Silicon MOSFET2SJ337Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ337]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ337]6.5 2.35.0 0.5

Datasheet: 2SJ285 , 2SJ287 , 2SJ288 , 2SJ289 , 2SJ308 , 2SJ316 , 2SJ320 , 2SJ337 , 60N06 , 2SJ340 , 2SJ348 , 2SJ381 , 2SJ382 , 2SJ383 , 2SK1900 , 2SK1905 , 2SK1906 .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - 2SJ339 MOSFET datasheet

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