HUF76629D3S Specs and Replacement
Type Designator: HUF76629D3S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: TO252AA
HUF76629D3S substitution
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HUF76629D3S datasheet
huf76629d3st.pdf
HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052 , VGS = 10V DRAIN - rDS(ON) = 0.054 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒
huf76629d3st-f085.pdf
HUF76629D3ST-F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m D Features Typ rDS(on) = 41m at VGS = 10V, ID = 20A Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant Qualified to AEC Q101 S Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Distributed Power Architectures and VRM Pr... See More ⇒
huf76629d3-s.pdf
HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052 , VGS = 10V DRAIN - rDS(ON) = 0.054 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect... See More ⇒
Detailed specifications: HUF76443S3S , HUF76445P3 , HUF76445S3S , HUF76609D3 , HUF76609D3S , HUF76619D3 , HUF76619D3S , HUF76629D3 , IRFP250 , HUF76633P3 , HUF76633S3S , HUF76639P3 , HUF76639S3S , HUF76645P3 , HUF76645S3S , IRC120 , IRC130 .
Keywords - HUF76629D3S MOSFET specs
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