2SJ382 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ382
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 370 pF
Maximum Drain-Source On-State Resistance (Rds): 0.177 Ohm
Package: TP
2SJ382 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ382 Datasheet (PDF)
1.1. 2sj382.pdf 
Size:96K _sanyo
Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ382] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ382] 6.5 2.3 5.0 0.5 4 0.5 0.85
5.1. 2sj389l-s.pdf Size:48K _upd
2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai
5.2. 2sj380.pdf Size:320K _toshiba
5.3. 2sj381.pdf Size:106K _sanyo
Ordering number:EN5296A P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ381] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete
5.4. 2sj383.pdf Size:110K _sanyo
Ordering number:EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ383] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ383] 6.5 2.3 5.0 0.5 4 0.5 0.8
5.5. 2sj387.pdf Size:88K _renesas
2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: P
5.6. rej03g0862 2sj387lsds.pdf Size:101K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
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