2SK198 Specs and Replacement
Type Designator: 2SK198
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
Package: TO236
SC59
- MOSFET ⓘ Cross-Reference Search
2SK198 datasheet
0.2. Size:31K panasonic
2sk1980.pdf 
Power F-MOS FETs 2SK1980 2SK1980 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15mJ 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 VGSS= 30V guaranteed High-speed switching tf= 25ns No secondary breakdown 1.5max. 1.1max. Applications Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control ... See More ⇒
0.3. Size:249K fuji
2sk1986-01.pdf 
FUJI POWER MOSFET 2SK1986-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c... See More ⇒
0.5. Size:212K fuji
2sk1981-01.pdf 
N-channel MOS-FET 2SK1981-01 FAP-IIA Series 500V 0,76 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equi... See More ⇒
0.7. Size:210K fuji
2sk1983-01.pdf 
N-channel MOS-FET 2SK1983-01 FAP-IIA Series 900V 4 3A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivale... See More ⇒
0.8. Size:192K fuji
2sk1984-01mr.pdf 
2SK1984-01MR N-channel MOS-FET FAP-IIA Series 900V 4 3A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival... See More ⇒
0.9. Size:212K inchange semiconductor
2sk1982.pdf 
isc N-Channel MOSFET Transistor 2SK1982 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UN... See More ⇒
0.10. Size:212K inchange semiconductor
2sk1984.pdf 
isc N-Channel MOSFET Transistor 2SK1984 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNI... See More ⇒
0.11. Size:215K inchange semiconductor
2sk1981.pdf 
isc N-Channel MOSFET Transistor 2SK1981 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V ... See More ⇒
0.12. Size:216K inchange semiconductor
2sk1983.pdf 
isc N-Channel MOSFET Transistor 2SK1983 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
0.13. Size:230K inchange semiconductor
2sk1982-01m.pdf 
isc N-Channel MOSFET Transistor 2SK1982-01M DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
0.14. Size:213K inchange semiconductor
2sk1985.pdf 
isc N-Channel MOSFET Transistor 2SK1985 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNI... See More ⇒
Detailed specifications: 2SK1900, 2SK1905, 2SK1906, 2SK1907, 2SK1908, 2SK1909, 2SK1961, 2SK1967, IRLZ44N, 2SK1980, 2SK2326, 2SK2327, 2SK2339, 2SK2340, 2SK2342, 2SK2347, 2SK2348
Keywords - 2SK198 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.