2SJ400 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ400
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 2400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SMP
2SJ400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ400 Datasheet (PDF)
2sj400.pdf
Ordering number:ENN6422P-Channel Silicon MOSFET2SJ400Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ400] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2
2sj402.pdf
2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 29 m (typ.) DS (ON) High forward transfer admittance : |Y | = 23 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode
2sj407.pdf
2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = -100 A (max) (V = -200 V) DSS DS Enhancement-mode : Vth = -1.5~-3.
2sj401.pdf
2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 33 m (typ.) DS (ON) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode
2sj409l-s.pdf
2SJ409(L), 2SJ409(S)Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SJ409(L), 2SJ409(S)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: QM6016F | HUF75321D3ST
History: QM6016F | HUF75321D3ST
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