2SJ400 PDF and Equivalents Search

 

2SJ400 Specs and Replacement

Type Designator: 2SJ400

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 2400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SMP

2SJ400 substitution

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2SJ400 datasheet

 ..1. Size:43K  sanyo
 2sj400.pdf pdf_icon

2SJ400

Ordering number ENN6422 P-Channel Silicon MOSFET 2SJ400 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A 4V drive. [2SJ400] Enables simplified fabrication, high-density mount- 4.5 10.2 1.3 ing, and miniaturization in end products due to the surface mountable package. 1.2 0.8 0.4 1 2... See More ⇒

 9.1. Size:420K  toshiba
 2sj402.pdf pdf_icon

2SJ400

2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 29 m (typ.) DS (ON) High forward transfer admittance Y = 23 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode... See More ⇒

 9.2. Size:397K  toshiba
 2sj407.pdf pdf_icon

2SJ400

2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = -100 A (max) (V = -200 V) DSS DS Enhancement-mode Vth = -1.5 -3.... See More ⇒

 9.3. Size:420K  toshiba
 2sj401.pdf pdf_icon

2SJ400

2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 33 m (typ.) DS (ON) High forward transfer admittance Y = 20 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode... See More ⇒

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Detailed specifications: 2SK2349 , 2SK2374 , 2SK2375 , 2SK2377 , 2SK2378 , 2SK2379 , 2SK2380 , 2SK2383 , AON7408 , 2SJ466 , 2SJ485 , 2SJ499 , 2SJ501 , 2SJ502 , 2SJ503 , 2SJ520 , 2SJ560 .

Keywords - 2SJ400 MOSFET specs

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