SSF10N60 Specs and Replacement

Type Designator: SSF10N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.2 nS

Cossⓘ - Output Capacitance: 159 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

SSF10N60 substitution

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SSF10N60 datasheet

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SSF10N60

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SSF10N60

SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol... See More ⇒

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SSF10N60

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SSF10N60

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Detailed specifications: SSF1020A, SSF1020D, SSF1030, SSF1030B, SSF1030D, SSF1090, SSF1090A, SSF1090D, STF13NM60N, SSF10N60F, SSF10N65, SSF10N90F1, SSF1109, SSF1116, SSF1116A, SSF1122, SSF1122D

Keywords - SSF10N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.