SSF1116 MOSFET. Datasheet pdf. Equivalent

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

SSF1122D Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122D is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re

SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t

SSF1109Main Product Characteristics: VDSS 110V RDS(on) 6.7mohm(typ.)ID 130AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

SSF11NS65FMain Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh

SSF11NS65Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which

SSF11NS70UF Main Product Characteristics: VDSS 700V RDS(on) 0.4 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS70UF series MOSFETs is a new

SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33 (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno

SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te

SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60D series MOSFETs is a

SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39 (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol

SSF1122 Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reli

SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol