SSF18NS60 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF18NS60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 610 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 24.3 nS
Drain-Source Capacitance (Cd): 783 pF
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: TO220
SSF18NS60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF18NS60 Datasheet (PDF)
1.1. ssf18ns60.pdf 
Size:607K _silikron
SSF18NS60 Main Product Characteristics: VDSS 610V RDS(on) 0.27Ω(typ.) ID 15A ① Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF18NS60 series MOSFETs is a new technology
1.2. ssf18ns60f.pdf Size:512K _silikron
SSF18NS60F Main Product Characteristics: VDSS 610V RDS(on) 0.27ohm(typ.) ID 15A ① Marking and pin TO220F Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF18NS60F series MOSFETs is a new technology, whic
4.1. ssf18n50f.pdf Size:379K _silikron
SSF18N50F Main Product Characteristics: VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Marking and pin TO220F Schematic diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating
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