SSF1N90D Datasheet and Replacement
Type Designator: SSF1N90D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: TO252
SSF1N90D substitution
SSF1N90D Datasheet (PDF)
ssf1n90d.pdf

SSF1N90DMain Product Characteristics: VDSS 900V RDS(on) 15 (typ.) ID 1A Marking and pin TO-252Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1n80d.pdf

SSF1N80DMain Product Characteristics: VDSS 800V RDS(on) 13 (typ.) ID 1A Marking and pin TO-252Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1n80g5.pdf

SSF1N80G5Main Product Characteristics: VDSS 800V RDS(on) 13 (typ.) ID 1AMarking and pin SOT223Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Datasheet: SSF1504D , SSF1526 , SSF1530 , SSF18N50F , SSF18NS60 , SSF18NS60F , SSF1N80D , SSF1N80G5 , 50N06 , SSF20N50UH , SSF20N60H , SSF20NS60 , SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 , SSF2116EJ3 .
History: IXTP01N100D | IXTP4N80A | BRCS250N10SDP
Keywords - SSF1N90D MOSFET datasheet
SSF1N90D cross reference
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History: IXTP01N100D | IXTP4N80A | BRCS250N10SDP



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