SSF2318E Datasheet and Replacement
Type Designator: SSF2318E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOT23
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SSF2318E Datasheet (PDF)
ssf2318e.pdf

SSF2318EDESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON)
ssf2314.pdf

SSF2314 DDESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR
ssf2312.pdf

SSF2312DDESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | FDMS9620S | HGS120N10SL | IRFI7536G | AON7240
Keywords - SSF2318E MOSFET datasheet
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History: WMM11N80M3 | FDMS9620S | HGS120N10SL | IRFI7536G | AON7240



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