SSF2649 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF2649
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 156 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOP8
SSF2649 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF2649 Datasheet (PDF)
ssf2649.pdf
SSF2649Main Product Characteristics: D1 D2VDSS -20V G1 G2 RDS(on) 49mohm(typ.)S1 S2ID -7.9A Marking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re
ssf2641s.pdf
SSF2641S 20V P-Channel MOSFET DDESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings. SSchematic Diagram GENERAL FEATURES VDS = -20V,ID = -7.9A RDS(ON)
ssf2627.pdf
SSF2627DDESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5.4A RDS(ON)
ssf26ns60a.pdf
SSF26NS60AMain Product Characteristics VDSS 600V RDS(on) 0.135(typ.) ID 20AMarking and Pin D2PAKSchematic DiagramAssignmentFeatures and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines
ssf2637e.pdf
SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES VDS = -20V,ID =-5.4A RDS(ON)
ssf2610e.pdf
SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 8A Schematic diagram RDS(ON)
ssf26ns60.pdf
SSF26NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.135(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF26NS60 series MOSFETs is a new technology, w
ssf2616e.pdf
SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: VP0104 | IPB80N08S4-06 | BUK9606-30 | IXTK21N100
History: VP0104 | IPB80N08S4-06 | BUK9606-30 | IXTK21N100
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918