All MOSFET. SSF2N60 Datasheet

 

SSF2N60 Datasheet and Replacement


   Type Designator: SSF2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220
 

 SSF2N60 substitution

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SSF2N60 Datasheet (PDF)

 ..1. Size:428K  silikron
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SSF2N60

SSF2N60Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.)ID 2ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temper

 0.1. Size:528K  silikron
 ssf2n60f.pdf pdf_icon

SSF2N60

SSF2N60F Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 0.2. Size:496K  silikron
 ssf2n60d.pdf pdf_icon

SSF2N60

SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8 (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.3. Size:451K  silikron
 ssf2n60g.pdf pdf_icon

SSF2N60

SSF2N60G Main Product Characteristics: VDSS 600V RDS(on) 3.5 (typ.) ID 2A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

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Datasheet: SSF26NS60A , SSF2701 , SSF2810EH2 , SSF2814E , SSF2814EH2 , SSF2816E , SSF2816EB , SSF2841 , P60NF06 , SSF2N60D , SSF2N60D2 , SSF2N60F , SSF2N60G , SSF3002EG1 , SSF3018 , SSF3018D , SSF3028C1 .

History: BL4N80-P | IPG20N06S4-15

Keywords - SSF2N60 MOSFET datasheet

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