All MOSFET. SSF2N60D2 Datasheet

 

SSF2N60D2 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSF2N60D2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 34 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 23.4 nS

Drain-Source Capacitance (Cd): 35.7 pF

Maximum Drain-Source On-State Resistance (Rds): 4.2 Ohm

Package: TO252

SSF2N60D2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSF2N60D2 Datasheet (PDF)

1.1. ssf2n60d2.pdf Size:461K _silikron

SSF2N60D2
SSF2N60D2

 SSF2N60D2 Main Product Characteristics: VDSS 600V RDS(on) 3.7Ω (typ.) ID 2A TO-252 Marking a nd pin Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

2.1. ssf2n60d.pdf Size:496K _silikron

SSF2N60D2
SSF2N60D2

 SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8Ω (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

3.1. ssf2n60g.pdf Size:451K _silikron

SSF2N60D2
SSF2N60D2

 SSF2N60G Main Product Characteristics: VDSS 600V RDS(on) 3.5Ω (typ.) ID 2A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

3.2. ssf2n60.pdf Size:428K _silikron

SSF2N60D2
SSF2N60D2

 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A TO220 Marking and pin Schematic diagram  Assignment  Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temper

3.3. ssf2n60f.pdf Size:528K _silikron

SSF2N60D2
SSF2N60D2

 SSF2N60F Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recove

Datasheet: SSF2810EH2 , SSF2814E , SSF2814EH2 , SSF2816E , SSF2816EB , SSF2841 , SSF2N60 , SSF2N60D , 2SK3568 , SSF2N60F , SSF2N60G , SSF3002EG1 , SSF3018 , SSF3018D , SSF3028C1 , SSF3036C , SSF3051G7 .

 


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