SSF3605S PDF and Equivalents Search

SSF3605S Main Product Characteristics D VDSS -30V G RDS(on) 5.1m (typ.) S ID -15A SOP-8 Mar ki ng a nd p in Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco... See More ⇒

SSF3606 D DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =15A RDS(ON) ... See More ⇒

SSF3604 D DESCRIPTION The SSF3604 uses advanced trench technology to G provide excellent RDS(ON) and low gate charge .This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =18.5A RDS(ON) ... See More ⇒

SSF3624 DESCRIPTION The SSF3624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6A RDS(ON) ... See More ⇒

SSF3612 D DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON) ... See More ⇒

SSF3616 D DESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON) ... See More ⇒

SSF3617 D DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON) ... See More ⇒

SSF3637S D DESCRIPTION The SSF3637S uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A R ... See More ⇒

SSF3610 D DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON) ... See More ⇒

SSF3620 DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =7A RDS(ON) ... See More ⇒

SSF3626 DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6.9A R ... See More ⇒

SSF3637 D1 D2 DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2 been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5A RDS(ON) ... See More ⇒

SSF3615 D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON) ... See More ⇒

SSF3641 DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-5A RDS(ON) ... See More ⇒

SSF3639C DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.3A RDS(ON) ... See More ⇒

SSF3610E Main Product Characteristics VDSS 25 V SSF3610E SSF3610E RDS(on) 6.8 m (typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an... See More ⇒

SSF3611E Main Product Characteristics VDSS -30 V RDS(on) 10.6 m (typ.) ID -12A Marking and pin SOP-8 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem... See More ⇒