SSF5N60F Specs and Replacement

Type Designator: SSF5N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.3 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO220F

SSF5N60F substitution

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SSF5N60F datasheet

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SSF5N60F

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SSF5N60F

SSF5N60D Main Product Characteristics VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

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SSF5N60F

SSF5N60G Main Product Characteristics VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

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SSF5N60F

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Detailed specifications: SSF4N60G, SSF4NS60D, SSF53A0E, SSF5506, SSF5508A, SSF5508U, SSF5N50D, SSF5N60D, IRF4905, SSF5N60G, SSF5NS50U, SSF5NS60UD, SSF5NS65G, SSF5NS65UD, SSF5NS65UF, SSF5NS65UG, SSF5NS70G

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