SSF5N60F Datasheet and Replacement
Type Designator: SSF5N60F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 16.3
nS
Cossⓘ -
Output Capacitance: 59
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1
Ohm
Package:
TO220F
- MOSFET Cross-Reference Search
SSF5N60F Datasheet (PDF)
..1. Size:376K silikron
ssf5n60f.pdf 
SSF5N60FMain Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.)ID 4AMarking and pin TO220FSchematic diagramFeatures and Benefits: Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150
7.1. Size:483K silikron
ssf5n60d.pdf 
SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
7.2. Size:491K silikron
ssf5n60g.pdf 
SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.3. Size:459K silikron
ssf5ns65ug.pdf 
SSF5NS65UG Main Product Characteristics: VDSS 650V RDS(on) 1.1 (typ.) ID 5A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UG series MOSFETs is a new technology,
9.4. Size:480K silikron
ssf5ns50u.pdf 
SSF5NS50U Main Product Characteristics: VDSS 500V RDS(on) 0.55 (typ.) ID 5A Marking and pi n TO-220 Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS50U series MOSFETs is a new technology, which
9.5. Size:430K silikron
ssf5ns70ug.pdf 
SSF5NS70UG Main Product Characteristics VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70UG series MOSFETs is a new technology, whi
9.6. Size:485K silikron
ssf5ns60ud.pdf 
SSF5NS60UD Main Product Characteristics: VDSS 600V RDS(on) 0.73 (typ.) ID 5A TO-252 (D-PAK) Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS60UD series MOSFETs is a new tec
9.7. Size:521K silikron
ssf5n50d.pdf 
SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5 (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.8. Size:547K silikron
ssf5ns70g-d-f.pdf 
SSF5NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.23 (typ.) ID 5A 251 TO-252 TO- TO-220F Schematic diagram SSF5NS70G SSF5NS70D SSF5NS70F Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70G/D/F s
9.9. Size:477K silikron
ssf5ns65g.pdf 
SSF5NS65G Main Product Characteristics: VDSS 650V RDS(on) 1.0 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65G series MOSFETs is a new te
9.10. Size:424K silikron
ssf5ns70gbp.pdf 
SSF5NS70GB Main Product Characteristics VDSS 700V RDS(on) 1.3 (typ.) ID 5A TO-251S Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70GB series MOSFETs is a new technology, which com
9.11. Size:469K silikron
ssf5ns65ud.pdf 
SSF5NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.74 (typ.) ID 5A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UD series MOSFETs is a new technology,
9.12. Size:491K silikron
ssf5ns70uf.pdf 
SSF5NS70UF Main Product Characteristics: VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-220F Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70UF series MOSFETs is a new technology, which c
9.13. Size:446K silikron
ssf5ns65uf.pdf 
SSF5NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 5A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UF series MOSFETs is a new technology, which
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History: PJS6403
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| FHD100N03A
| IXFH9N80
| RFD16N05SM
| BUK7L06-34ARC
| PH3855L
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