SSF6010 PDF and Equivalents Search

SSF6010 Feathers ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description The SSF6010 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical... See More ⇒

SSF6010A Feathers ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description The SSF6010A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric... See More ⇒

SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and ... See More ⇒

SSF6014J7 Main Product Characteristics VDSS 60V RDS(on) 11m (typ.) ID 40A PQFN 5x6 Pin Assignment Schematic Diagram Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope... See More ⇒

SSF6014D Main Product Characteristics VDSS 60V RDS(on) 12m (typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec... See More ⇒

SSF6014A Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6014A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele... See More ⇒

SSF6014J8 Main Product Characteristics V 60V DSS R (on) 16m (typ.) DS I 22A D PinAssignment Schematic diagram DFN3.3x3.3 Bottom view Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

SSF6014 Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect... See More ⇒