SSF6N70GM Datasheet and Replacement

SSF6N70GM Main Product Characteristics: VDSS 700V RDS(on) 1.49 (typ.) ID 6A IPAKM-S2 Marking and p in S che ma ti c di ag ra m (Details in page6) Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

SSF6N70G Main Product Characteristics: VDSS 700V RDS(on) 1.49 (typ.) ID 6A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF6N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

SSF6N80F Main Product Characteristics: VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco

SSF6N80A6 Main Product Characteristics: VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking and p in TO-262 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF6NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 1.08 (typ.) ID 6A IPAK-NX Marking and Pi n Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UGX series MOSFETs is a new technology, whi

SSF6NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UG series MOSFETs is a new technology,

SSF6N80G Main Product Characteristics: VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

SSF6NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.78 (typ.) ID 6A Marking and pin TO-220F Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS65UF series MOSFETs is a new technology, whic

SSF6N40D Main Product Characteristics: VDSS 400V RDS(on) 0.85 (typ.) ID 5.5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

SSF6NS70UD Main Product Characteristics: VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UD series MOSFETs is a new technology,

SSF6NS70UGS Main Product Characteristics: VDSS 700V RDS(on) 1.1 (typ.) ID 6A TO-251S Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70UGS series MOSFETs is a new technology, whic

SSF6NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.2 (typ.) ID 5.2A 251 TO-252 TO- TO-220F Schematic diagram SSF6NS70G SSF6NS70D SSF6NS70F Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF6NS70G/D/F