SSF7N60F Specs and Replacement

Type Designator: SSF7N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.2 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

SSF7N60F substitution

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SSF7N60F datasheet

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SSF7N60F

SSF7N60F Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery... See More ⇒

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SSF7N60F

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SSF7N60F

November 2001 SSF7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

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SSF7N60F

SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N Channel enhancement mode... See More ⇒

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Detailed specifications: SSF7509B, SSF7509J7, SSF7510, SSF7604, SSF7607, SSF7609, SSF7610, SSF7N60, IRFZ44, SSF7N65F, SSF7NS60D, SSF7NS60F, SSF7NS65G, SSF7NS65UD, SSF7NS65UF, SSF7NS65UG, SSF7NS70UG

Keywords - SSF7N60F MOSFET specs

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