SSPL6040D
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSPL6040D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 33
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
DPAK
SSPL6040D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSPL6040D
Datasheet (PDF)
..1. Size:468K silikron
sspl6040d.pdf
SSPL6040D Main Product Characteristics: VDSS 60V RDS(on) 34m (typ.) ID 33A TO-252 (D-PAK) Marking a nd p in S c he mati c di agram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
6.1. Size:518K silikron
sspl6040.pdf
SSPL6040 Main Product Characteristics: VDSS 60V RDS(on) 34m (typ.) ID 38A TO-220 Mar ki ng a nd p in Sche mati c di agra m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
8.1. Size:648K silikron
sspl6005.pdf
SSPL6005 Main Product Characteristics: VDSS 60V RDS(on) 4.9mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
8.2. Size:643K silikron
sspl6022.pdf
SSPL6022 Main Product Characteristics: VDSS 60V RDS(on) 20mohm(typ.) ID 50A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
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