All MOSFET. SSFD4004 Datasheet

 

SSFD4004 Datasheet and Replacement


   Type Designator: SSFD4004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 153 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 245 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 632 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DPAK
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SSFD4004 Datasheet (PDF)

 ..1. Size:562K  silikron
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SSFD4004

SSFD4004 Main Product Characteristics: VDSS 40V RDS(on) 3.2mohm(typ.) ID 145A TO-252 Mar ki ng a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 8.1. Size:264K  silikron
 ssfd4024.pdf pdf_icon

SSFD4004

SSFD4024 Main Product Characteristics: VDSS 40VRDS(on) 30 mohmTO-252 top view ID 12AFeatures and Benefits: Advanced trench MOSFET process technology SSFD4024 Special designed for Convertors and power controls Ultra low on-resistance 175 operating temperature Marking and pin Assignment Description: It utilizes the latest trench processing techniques to ac

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History: SMIRF18N50T2TL | BUZ84 | AON6794 | CED05N8 | STD95N04 | IRFHM792PBF | BL10N70-A

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