SSFM3008L Specs and Replacement
Type Designator: SSFM3008L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46.5 nS
Cossⓘ - Output Capacitance: 356 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DPAK
SSFM3008L substitution
- MOSFET ⓘ Cross-Reference Search
SSFM3008L datasheet
ssfm3008l.pdf
SSFM3008L Main Product Characteristics VDSS 30V SSFM3008L SSFM3008L SSFM3008 SSFM3008 SSFM3008 SSFM3008 RDS(on) 5.0mohm(typ.) ID 50A Marking and pin TO252 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with lo... See More ⇒
ssfm3008h1.pdf
SSFM3008H1 Main Product Characteristics VDSS 30V SSFM3008H1 SSFM3008H1 RDS(on) 7.4mohm(typ.) ID 20A SOP-8 Marking and pin Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re... See More ⇒
ssfm3008.pdf
SSFM3008 Main Product Characteristics VDSS 30V SSFM3008 SSFM3008 RDS(on) 5.0mohm(typ.) ID 50A Marking and pin TO252 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers... See More ⇒
Detailed specifications: SSFD4004, SSFD4024, SSFD6035, SSFD6046, SSFM1022, SSFM2506, SSFM3008, SSFM3008H1, BS170, SSFM8005, SSFN2220, SSFN2269, SSFN2316E, SSFN2569, SSFN3313, SSFN3317, SSFN6816
Keywords - SSFM3008L MOSFET specs
SSFM3008L cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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