SSFN2569 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSFN2569
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: DFN3X2-8L
SSFN2569 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSFN2569 Datasheet (PDF)
ssfn2569.pdf
SSFN2569 Main Product Characteristics: D1D2VDSS -20V G1 G2 RDS(on) 55m (typ.) S1 S2ID -3.4A DFN 3x2-8L Schemat ic diagram Bottom View Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
ssfn2220.pdf
SSFN2220DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A RDS(ON)
ssfn2269.pdf
SSFN2269DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-3.3A Schematic diagram RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TSM4946DCS
History: TSM4946DCS
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