SSFN3313 Datasheet and Replacement
Type Designator: SSFN3313
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN3X3-8L
SSFN3313 substitution
SSFN3313 Datasheet (PDF)
ssfn3313.pdf

SSFN3313DDESCRIPTION The SSFN3313 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-8A RDS(ON)
ssfn3317.pdf

SSFN3317DDESCRIPTION The SSFN3317 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-7A RDS(ON)
Datasheet: SSFM3008 , SSFM3008H1 , SSFM3008L , SSFM8005 , SSFN2220 , SSFN2269 , SSFN2316E , SSFN2569 , 13N50 , SSFN3317 , SSFN6816 , SSFT3904 , SSFT3904J7-HF , SSFT3904U , SSFT3906 , SSFT4002 , SSFT4003 .
History: 2SK811 | TMU8N60H | TPC6007-H | FDD9409F085 | SVT077R5NT | WML10N70D1 | ME20P03-G
Keywords - SSFN3313 MOSFET datasheet
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History: 2SK811 | TMU8N60H | TPC6007-H | FDD9409F085 | SVT077R5NT | WML10N70D1 | ME20P03-G



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