SSFT4003
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSFT4003
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 220
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 24
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 200
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 104
nC
trⓘ - Rise Time: 57.8
nS
Cossⓘ -
Output Capacitance: 959
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
TO220AB
SSFT4003
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSFT4003
Datasheet (PDF)
..1. Size:500K silikron
ssft4003 ssft4003a.pdf
SSFT4003/SSFT4003AMain Product Characteristics: VDSS 40V RDS(on) 2.4m(typ.) ID 200A TO-220 TO-263 Schematic diagramSSFT4003 SSFT4003A Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
7.1. Size:638K silikron
ssft4004.pdf
SSFT4004 Main Product Characteristics: VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A S che ma ti c di ag ra m TO220 Mar ki ng a nd p in Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and rever
7.2. Size:521K silikron
ssft4002.pdf
SSFT4002 Main Product Characteristics: VDSS 40V SSFT4002SSFT4002SSFT3906SSFT3906RDS(on) 2.1 mohm ID 220A Features and Benefits: TO220 Marking and pin Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capabil
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