SSPL5508 Datasheet and Replacement
Type Designator: SSPL5508
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 721 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SSPL5508 Datasheet (PDF)
sspl5508.pdf

SSPL5508 Main Product Characteristics VDSS 55V RDS(on) 7.2m(typ.) ID 110A Schematic Diagram TO-220 Marking a nd P in Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
sspl5505.pdf

SSPL5505 Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
sspl50n30h.pdf

SSPL50N30H Main Product Characteristics: VDSS 300V RDS(on) 45m(typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
Datasheet: SSPL1090 , SSPL2015 , SSPL2015D , SSPL2015F , SSPL2090 , SSPL4004 , SSPL50N30H , SSPL5505 , 60N06 , MMBT7002 , MMBT7002DW , MMBT7002E , MMBT7002K , MMBT7002KW , MMBT7002VW , MMBT7002W , MMFTN123 .
Keywords - SSPL5508 MOSFET datasheet
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