All MOSFET. MMBT7002K Datasheet

 

MMBT7002K MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMBT7002K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO236

 MMBT7002K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMBT7002K Datasheet (PDF)

 ..1. Size:176K  semtech
 mmbt7002k.pdf

MMBT7002K MMBT7002K

MMBT7002K N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS

 0.1. Size:701K  semtech
 mmbt7002kw.pdf

MMBT7002K MMBT7002K

MMBT7002KW N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceSOT-323 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS

 6.1. Size:757K  semtech
 mmbt7002e.pdf

MMBT7002K MMBT7002K

MMBT7002E N-Channel Enhancement Mode Field Effect Transistor DrainGate1. Gate 2. Source 3. Drain SOT-523 Plastic Package SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID

 6.2. Size:463K  semtech
 mmbt7002w.pdf

MMBT7002K MMBT7002K

MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID Pulsed 800 Total Powe

 6.3. Size:447K  semtech
 mmbt7002vw.pdf

MMBT7002K MMBT7002K

MMBT7002VW N-Channel Enhancement Mode Field Effect Transistor Features Drain Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance Gate ESD protected up to 1KV SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS 20 VDrain Current (Continuous) ID 300 mAD

 6.4. Size:595K  semtech
 mmbt7002dw.pdf

MMBT7002K MMBT7002K

MMBT7002DW N-Channel Enhancement Mode Field Effect Transistor 6 5 4TR2TR11.Source 2. Gate 3. Drain 1 2 34. Source 5. Gate 6. DrainSOT-363 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115

 6.5. Size:190K  semtech
 mmbt7002.pdf

MMBT7002K MMBT7002K

MMBT7002 N-Channel Enhancement Mode Field Effect Transistor DrainFeatures High density cell design for low RDS(ON) Voltage controlled small signal switching High saturation current capability Gate High speed switching Source 1.Gate 2.Source 3.DrainTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltag

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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