MMFTN3019E PDF and Equivalents Search

 

MMFTN3019E Specs and Replacement

Type Designator: MMFTN3019E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT523

MMFTN3019E substitution

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MMFTN3019E datasheet

 ..1. Size:522K  semtech
mmftn3019e.pdf pdf_icon

MMFTN3019E

MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Vo... See More ⇒

 0.1. Size:330K  msksemi
mmftn3019e-ms.pdf pdf_icon

MMFTN3019E

www.msksemi.com MMFTN3019E-MS Semiconductor Compiance Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGS Continuous Gate-Source Voltage 20V V 3 I Continuous Drain Current 100 mA D P Power Dissipation 150 mW D 2 R JA Thermal Resistance from Junction to Ambient 833 C /W 1. Gate 2. Source TSTG Storage Te... See More ⇒

 6.1. Size:462K  semtech
mmftn3018w.pdf pdf_icon

MMFTN3019E

MMFTN3018W Silicon N-Channel MOSFET Drain Applications Interfacing, switching Gate 1. Gate 2. Source 3. Drain Source SOT-323 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS 20 V Drain Current - Continuous ID 100 mA Drain Current - Pulsed IDP 1) 400 200 mW Total Power ... See More ⇒

 8.1. Size:215K  semtech
mmftn3406.pdf pdf_icon

MMFTN3019E

MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 3.6 A Drain Current - Pulsed 1) IDM 15 A Power Dissipation 1) Pd 1.4 W Therm... See More ⇒

Detailed specifications: MMFTN123, MMFTN138, MMFTN170, MMFTN20, MMFTN2302, MMFTN2306, MMFTN290E, MMFTN3018W, IRF740, MMFTN3406, MMFTN501, MMFTP84W, ST2N7000, MMFTN138W, 2SK2876-01MR, 2SK1356, SD211DE

Keywords - MMFTN3019E MOSFET specs

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