All MOSFET. 2SJ169 Datasheet

 

2SJ169 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ169

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 Β°C

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: TO220AB

2SJ169 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ169 Datasheet (PDF)

1.1. 2sj169 2sj170.pdf Size:119K _hitachi

2SJ169
2SJ169

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5.1. 2sj167.pdf Size:294K _toshiba

2SJ169
2SJ169

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs • Low on resistance: R = 1.3 ? (typ.) DS (ON) • Enhancement-mode • Complementary to 2SK1061 Maximum R

5.2. 2sj168.pdf Size:330K _toshiba

2SJ169
2SJ169

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = -50 mA D • Low on resistance: R = 1.3 ? (typ.) @ I = -50 mA DS (ON) D • Enhancement-mode • Comp

5.3. rej03g0847 2sj160 2sj161 2sj162.pdf Size:83K _renesas

2SJ169
2SJ169

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.4. 2sj165.pdf Size:384K _nec

2SJ169
2SJ169

5.5. 2sj166.pdf Size:350K _nec

2SJ169
2SJ169

5.6. 2sj164.pdf Size:27K _panasonic

2SJ169
2SJ169

Silicon Junction FETs (Small Signal) 2SJ164 2SJ164 Silicon P-Channel Junction Unit : mm For switching 4.0± 0.2 Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 1.27 1.27 1 : Source Gate-Drain voltage VGDS 65 V 2.54± 0.15 2 : Gate Drain current ID –20 mA 3 : Drain G

5.7. 2sj163.pdf Size:29K _panasonic

2SJ169
2SJ169

Silicon Junction FETs (Small Signal) 2SJ163 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching +0.2 2.8 –0.3 Complementary with 2SK1103 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4± 0.2 Drain cur

5.8. 2sj160 2sj161 2sj162.pdf Size:38K _hitachi

2SJ169
2SJ169

2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET ADE-208-1182 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable f

5.9. 2sj166.pdf Size:1307K _kexin

2SJ169
2SJ169

ο»ΏSMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 β–  Features ● VDS (V) =-50V ● ID =-0.1 A (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) < 50Ξ© (VGS =-4V) +0.1 1.9-0.1 ● Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain β–  Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage

5.10. 2sj166-3.pdf Size:1317K _kexin

2SJ169
2SJ169

ο»ΏSMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 β–  Features ● VDS (V) =-50V ● ID =-0.1 A (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 ● RDS(ON) < 50Ξ© (VGS =-4V) +0.1 1.9-0.2 ● Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain β–  Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source V

Datasheet: SST213 , SST215 , 2SK3645-01MR , 2SK2663 , 2SK2077 , 2SK1488 , 2SK606 , 2SJ646 , IRFB3306 , 2SJ170 , FSA07N60A , FSN01N60A , FSW25N50A , FTD02N60C , FTU02N60C , FTD220 , FTU220 .

 


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