P45N03LTFG MOSFET. Datasheet pdf. Equivalent
Type Designator: P45N03LTFG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO220F
P45N03LTFG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P45N03LTFG Datasheet (PDF)
p45n03ltfg.pdf
P45N03LTFGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V25V 36ATO-220FABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C22AIDM140Pulsed Drain Curr
php45n03lt phb45n03lt phd45n03lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal
php45n03lt-06.pdf
PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance
php45n03lt 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal
php45n03lta phb45n03lta phd45n03lta.pdf
PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance
php45n03lt.pdf
PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance
khp45n03lt.pdf
SMDTypee IorDIP Type Tra n s is tICsSMD TypeSMD TypeSMDType CTypSMDDIP Type ICProduct specificationKHP45N03LTTO220FeaturesLow on-state resistanceFast switching.1Gate2Drain3SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 15Drain current (DC) ID 45 APower Dissipation PD 86 Wtherma
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PHP50N03LT
History: PHP50N03LT
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