P0465CTFS PDF and Equivalents Search

 

P0465CTFS Specs and Replacement

Type Designator: P0465CTFS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220FS

P0465CTFS substitution

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P0465CTFS datasheet

 6.1. Size:789K  unikc
 p0465ctf-s.pdf pdf_icon

P0465CTFS

P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7 @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C... See More ⇒

 7.1. Size:434K  unikc
 p0465ct.pdf pdf_icon

P0465CTFS

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1... See More ⇒

 8.1. Size:422K  unikc
 p0465cd.pdf pdf_icon

P0465CTFS

P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1... See More ⇒

 8.2. Size:428K  unikc
 p0465cs.pdf pdf_icon

P0465CTFS

P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1... See More ⇒

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Detailed specifications: P0465ATF, P0465ATFS, P0465CD, P0465CI, P0465CIS, P0465CS, P0465CT, P0465CTF, STP75NF75, P0470ATF, P0470ATFS, P0502CEA, P0510AT, P0550AD, P0550AT, P0550ATF, P0550BD

Keywords - P0465CTFS MOSFET specs

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