P0470ATF
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0470ATF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16.4
nC
trⓘ - Rise Time: 11.7
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8
Ohm
Package:
TO220F
P0470ATF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0470ATF
Datasheet (PDF)
0.1. Size:530K unikc
p0470atf-s.pdf 
P0470ATF / P0470ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.8 @VGS = 10V700V 4ATO-220F TO-220FS 100% UIS TestedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 700VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100
9.1. Size:257K niko-sem
p0470etf.pdf
P0470ETF NIKO-SEM N-Channel Enhancement Mode TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G700V 2.8 4A 3. SOURCE SABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC = 25
9.2. Size:192K niko-sem
p0470ed.pdf
P0470ED N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 700V 2.9 4A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC = 25
9.3. Size:323K niko-sem
p0470jd.pdf
N-Channel Enhancement Mode P0470JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 700V 1.63 4A 1. GATE 2. DRAIN G 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC
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