P0806ATX Datasheet and Replacement
Type Designator: P0806ATX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 1090 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
P0806ATX substitution
P0806ATX Datasheet (PDF)
p0806atx.pdf
P0806ATXN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 8m @VGS = 10V 110ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C110IDContinuous Drain Current1TC = 100 C69AIDM300Pulsed Drain Current2IASAvalanche Current 102
p0806at.pdf
P0806ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 8.5m @VGS = 10V 82ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C82IDContinuous Drain Current2TC = 100 C52AIDM246Pulsed Drain Current
p0806atf.pdf
P0806ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 8.5m @VGS = 10V 57ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 25 VTC = 25 C57IDContinuous Drain CurrentTC = 100 C36AIDMPulsed Drain Current 220IASAvalanche Current 64EA
Datasheet: PD533BA , PD537BA , PD548BA , PD570BA , PD612BA , PD628BA , P0806AT , P0806ATF , IRF520 , P0808ATG , P082ABD8 , P0850AT , P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB .
History: 2SK2891-01
Keywords - P0806ATX MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK2891-01
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