P0703EV MOSFET. Datasheet pdf. Equivalent
Type Designator: P0703EV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 1070 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: SOP8
P0703EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0703EV Datasheet (PDF)
0.1. p0703ev.pdf 
Size:494K _unikc
P0703EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5mΩ @VGS = -10V -30V -15A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -15 ID Continuous Drain Current TA = 70 ° C -11 A IDM -67 Pu
8.1. p0703ed.pdf Size:487K _unikc
P0703ED P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5mΩ @VGS = -10V -68A -30V TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V TC= 25 ° C -68 ID Continuous Drain Current2 TC= 100 ° C -43 A IDM -160
9.1. p0703bd.pdf Size:527K _unikc
P0703BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5mΩ @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC= 25 ° C 57 ID Continuous Drain Current TC= 100 ° C 36 A IDM 160 Pulsed Drain Current1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
