P1308ATG
MOSFET. Datasheet pdf. Equivalent
Type Designator: P1308ATG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 62
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 79
nC
trⓘ - Rise Time: 212
nS
Cossⓘ -
Output Capacitance: 279
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
TO220
P1308ATG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P1308ATG
Datasheet (PDF)
..1. Size:470K unikc
p1308atg.pdf
P1308ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13m @VGS = 10V75V 62ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C62IDContinuous Drain CurrentTC= 100 C39AIDM200Pulsed Drain Current1IASAvalanche Current 53EAS
7.1. Size:476K unikc
p1308atfg.pdf
P1308ATFGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13m @VGS = 10V75V 48ATO-220F-3ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C48IDContinuous Drain CurrentTC = 100 C30AIDM160Pulsed Drain Current1IASAvalanche Current 4
8.1. Size:517K unikc
p1308ak.pdf
P1308AKN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V75V 52APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 75VVGSGate-Source Voltage 20TC = 25 C52IDContinuous Drain CurrentTC = 70 C42AIDM100Pulsed Drain Curren
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