All MOSFET. P1308ATG Datasheet

 

P1308ATG Datasheet and Replacement


   Type Designator: P1308ATG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 79 nC
   tr ⓘ - Rise Time: 212 nS
   Cossⓘ - Output Capacitance: 279 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220
 
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P1308ATG Datasheet (PDF)

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P1308ATG

P1308ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13m @VGS = 10V75V 62ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C62IDContinuous Drain CurrentTC= 100 C39AIDM200Pulsed Drain Current1IASAvalanche Current 53EAS

 7.1. Size:476K  unikc
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P1308ATG

P1308ATFGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13m @VGS = 10V75V 48ATO-220F-3ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C48IDContinuous Drain CurrentTC = 100 C30AIDM160Pulsed Drain Current1IASAvalanche Current 4

 8.1. Size:517K  unikc
 p1308ak.pdf pdf_icon

P1308ATG

P1308AKN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V75V 52APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 75VVGSGate-Source Voltage 20TC = 25 C52IDContinuous Drain CurrentTC = 70 C42AIDM100Pulsed Drain Curren

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