P1503HK MOSFET. Datasheet pdf. Equivalent
Type Designator: P1503HK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 7.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 25.8 nS
Drain-Source Capacitance (Cd): 126 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: PDFN5X6P
P1503HK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P1503HK Datasheet (PDF)
p1503hk.pdf

P1503HKDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V30V 24APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24IDContinuous Drain CurrentTC = 100 C15IDM72Pulsed Drain Curr
p1503hv.pdf

P1503HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V30V 9ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9IDContinuous Drain CurrentTA = 70 C7AIDM40Pulsed Drain Current1
p1503bvg.pdf

P1503BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 15m @VGS = 10V 10ASOP- 08100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C10IDContinuous Drain CurrentTA = 70 C8A
Datasheet: P1350AT , P1350ATF , P1350ATFS , P1402CDG , P1403CV , P1403EK , P1403EV8 , P1503BVG , IRFP460 , P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED .



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