P1603BEBA PDF and Equivalents Search

 

P1603BEBA Specs and Replacement


   Type Designator: P1603BEBA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN2X2S
 

 P1603BEBA substitution

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P1603BEBA datasheet

 ..1. Size:456K  unikc
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P1603BEBA

P1603BEBA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 24 TC = 100 C 15 ID Continuous Drain Current3 TA = 25 C 8.8 A TA=... See More ⇒

 6.1. Size:221K  unikc
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P1603BEBA

P1603BEB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 21A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 21 TC = 100 C 17 ID Continuous Drain Current3 TA = 25 C 8 A TA= 70... See More ⇒

 6.2. Size:681K  unikc
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P1603BEBA

P1603BEBB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 24 TC = 100 C 15 ID Continuous Drain Current3 TA = 25 C 8.2 A TA=... See More ⇒

 8.1. Size:473K  unikc
 p1603bva.pdf pdf_icon

P1603BEBA

P1603BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = 10V 30V 9.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 9.4 ID Continuous Drain Current TA = 70 C 7.5 A IDM 50 Pulsed Drain Current... See More ⇒

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Detailed specifications: P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P1603BD , P1603BEB , AO3400 , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF , P1606BD , P1610AD .

Keywords - P1603BEBA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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