P1825AT Specs and Replacement
Type Designator: P1825AT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 215 nS
Cossⓘ - Output Capacitance: 153 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220
P1825AT substitution
- MOSFET ⓘ Cross-Reference Search
P1825AT datasheet
p1825at.pdf
P1825AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 0.2 @VGS = 10V 18A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 18 ID Continuous Drain Current1 TC = 100 C 8.5 A IDM 72 Pulsed Drain Current2 IAS Avalanche Current 15 E... See More ⇒
p1825ad.pdf
P1825AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 200m @VGS = 10V 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 18 ID Continuous Drain Current TC = 100 C 8 A IDM 72 Pulsed Drain Current1 IAS Avalanche Current 23 EAS... See More ⇒
p1825hdb.pdf
P1825HDB N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 230m 18A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS 20 V TC ... See More ⇒
Detailed specifications: P2615ATFG, P2615ATG, P261AFEA, P261ALV, P1810ATX, P1820AD, P1820BD, P1825AD, K4145, P2003BDG, P3504BD, P3506DD, P3506DT, P3506DTF, P3606BD, P3606HK, P4404EDG
Keywords - P1825AT MOSFET specs
P1825AT cross reference
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