P5003QVG Specs and Replacement

Type Designator: P5003QVG

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm

Package: SOP8

P5003QVG substitution

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P5003QVG datasheet

 ..1. Size:722K  unikc
 p5003qvg.pdf pdf_icon

P5003QVG

P5003QVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 27.5m @VGS = 10V 30V 10A N 45m @VGS = -10V -30V -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 10 TA = 25 C P -7 ID Co... See More ⇒

 7.1. Size:780K  unikc
 p5003qvt.pdf pdf_icon

P5003QVG

P5003QVT N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 27.5m @VGS =10V 30V 10A N 45m @VGS = -10V -30V -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 10 TA = 25 C P -7 ID Con... See More ⇒

Detailed specifications: P3606HK, P4404EDG, P4404EI, P4404ETG, P4404QV, P4404QVT, P5002CDG, P5002CMG, AO4407, P5003QVT, P5010AD, P5010AS, P5010AT, P2003BE, P2003BEA, P2003BEAA, P2003BT

Keywords - P5003QVG MOSFET specs

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