All MOSFET. P5003QVG Datasheet

 

P5003QVG Datasheet and Replacement


   Type Designator: P5003QVG
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOP8
 

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P5003QVG Datasheet (PDF)

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P5003QVG

P5003QVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel27.5m @VGS = 10V30V 10A N45m @VGS = -10V-30V -7A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 10TA = 25 CP -7IDCo

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P5003QVG

P5003QVTN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel27.5m @VGS =10V30V 10A N45m @VGS = -10V-30V -7A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 10TA = 25 CP -7IDCon

Datasheet: P3606HK , P4404EDG , P4404EI , P4404ETG , P4404QV , P4404QVT , P5002CDG , P5002CMG , P60NF06 , P5003QVT , P5010AD , P5010AS , P5010AT , P2003BE , P2003BEA , P2003BEAA , P2003BT .

History: SWP046R68E8T | ET6310 | MMN4946BEY | ME2323D | SIA537EDJ | SPU01N60C3 | QM2N7002E3K1

Keywords - P5003QVG MOSFET datasheet

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