P2003BE Specs and Replacement

Type Designator: P2003BE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN3X3S

P2003BE substitution

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P2003BE datasheet

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 p2003be.pdf pdf_icon

P2003BE

P2003BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 7A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TJ = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 25 TC = 100 C 15 ID Continuous Drain Current TA = 25 C 7 A TA = 70... See More ⇒

 0.1. Size:341K  unikc
 p2003bea.pdf pdf_icon

P2003BE

P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TC = 25 C 28 TC = 100 C 18 ID Continuous Drain Current TA = 25 C 10 A TA =... See More ⇒

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 p2003beaa.pdf pdf_icon

P2003BE

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 p2003bvg.pdf pdf_icon

P2003BE

P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 25 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A IDM 32 Pulsed Drain Current1 IAS... See More ⇒

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Detailed specifications: P4404QVT, P5002CDG, P5002CMG, P5003QVG, P5003QVT, P5010AD, P5010AS, P5010AT, 2SK3568, P2003BEA, P2003BEAA, P2003BT, P2003BV, P2003BVG, P2003BVT, P2003ED, P2003EEA

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