P2003BEAA MOSFET. Datasheet pdf. Equivalent
Type Designator: P2003BEAA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: PDFN3X3P
P2003BEAA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P2003BEAA PDF doc:
1.1. p2003beaa.pdf 
Size:523K _unikc
P2003BEAA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = 10V 30V 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 Tc = 25 ° C 25 Tc = 100 ° C 16 ID Continuous Drain Current TA = 25 ° C 8 A TA= 70 Â
2.1. p2003bea.pdf Size:341K _unikc
P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = 10V 30V 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 TC = 25 ° C 28 TC = 100 ° C 18 ID Continuous Drain Current TA = 25 ° C 10 A TA =
3.1. p2003be.pdf Size:499K _unikc
P2003BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = 10V 30V 7A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TJ = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC = 25 ° C 25 TC = 100 ° C 15 ID Continuous Drain Current TA = 25 ° C 7 A TA = 70
Datasheet: P5002CMG , P5003QVG , P5003QVT , P5010AD , P5010AS , P5010AT , P2003BE , P2003BEA , IRF5210 , P2003BT , P2003BV , P2003BVG , P2003BVT , P2003ED , P2003EEA , P2003EEAA , P2003ETF .
