P2003EVT Specs and Replacement

Type Designator: P2003EVT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

P2003EVT substitution

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P2003EVT datasheet

 ..1. Size:505K  unikc
 p2003evt.pdf pdf_icon

P2003EVT

P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A 100% UIS tested SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -9 ID Continuous Drain Current TC = 70 C -8 A IDM -32 ... See More ⇒

 7.1. Size:491K  unikc
 p2003evg.pdf pdf_icon

P2003EVT

P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7 ... See More ⇒

 7.2. Size:378K  unikc
 p2003ev8.pdf pdf_icon

P2003EVT

P2003EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 20m @VGS = -10V -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -10 ID Continuous Drain Current TA = 70 C -8 A IDM -55 Pulsed Drain Cu... See More ⇒

 7.3. Size:363K  unikc
 p2003ev.pdf pdf_icon

P2003EVT

P2003EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7 A IDM -45 Pulsed Drain Curr... See More ⇒

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Detailed specifications: P2003BVT, P2003ED, P2003EEA, P2003EEAA, P2003ETF, P2003EV, P2003EV8, P2003EVG, P60NF06, P2003HV, P2003KV, P2003NV, P2004EV, P2060ZTF, P2060ZTFS, P2103HVG, P2103NVG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.