P2060ZTF
MOSFET. Datasheet pdf. Equivalent
Type Designator: P2060ZTF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 94
nS
Cossⓘ -
Output Capacitance: 1096
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
TO220F
P2060ZTF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P2060ZTF
Datasheet (PDF)
0.1. Size:837K unikc
p2060ztf-s.pdf
P2060ZTF / P2060ZTFSN-Channel High Voltage Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID190m @VGS = 10V600V 20ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C20IDContinuous Drain Current2TC = 100 AC12ID
9.1. Size:406K diodes
dmp2060ufdb.pdf
DMP2060UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 90m @ VGS = -4.5V -3.2A Low Profile, 0.6mm Max Height -20V 137m @ VGS = -2.5V -2.6A ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
9.2. Size:334K niko-sem
p2060jf.pdf
N-Channel Enhancement Mode P2060JF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 196m 20A DG1. GATE 2. DRAIN S3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC
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