P2060ZTF Specs and Replacement
Type Designator: P2060ZTF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 1096 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220F
P2060ZTF substitution
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P2060ZTF datasheet
p2060ztf-s.pdf
P2060ZTF / P2060ZTFS N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 190m @VGS = 10V 600V 20A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 20 ID Continuous Drain Current2 TC = 100 A C 12 ID... See More ⇒
dmp2060ufdb.pdf
DMP2060UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 90m @ VGS = -4.5V -3.2A Low Profile, 0.6mm Max Height -20V 137m @ VGS = -2.5V -2.6A ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. ... See More ⇒
p2060jf.pdf
N-Channel Enhancement Mode P2060JF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 196m 20A D G 1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC ... See More ⇒
Detailed specifications: P2003EV, P2003EV8, P2003EVG, P2003EVT, P2003HV, P2003KV, P2003NV, P2004EV, IRF1405, P2060ZTFS, P2103HVG, P2103NVG, P2202CM, P2202CM6, P2202CV, P2204ND5G, P2206BD
Keywords - P2060ZTF MOSFET specs
P2060ZTF cross reference
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P2060ZTF replacement
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