P2202CV Datasheet and Replacement
Type Designator: P2202CV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
P2202CV substitution
P2202CV Datasheet (PDF)
p2202cv.pdf

P2202CVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22m @VGS = 4.5V20V 8ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 8TA = 25 C8IDContinuous Drain Current2TA = 70 C6AIDM80Pulsed Drain Current1,2I
p2202cm6.pdf

P2202CM6N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22m @VGS = 4.5V20V 5.6ASOT-23-6ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C5.6IDContinuous Drain CurrentTA = 70 C4.5AIDM50Pulsed Drain Current1IASAvalanche Current 21
p2202cm.pdf

P2202CMN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID24m @VGS = 4.5V20V 6ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C6IDContinuous Drain CurrentTA = 70 C5AIDM25Pulsed Drain Current1IASAvalanche Current 21EASA
Datasheet: P2003NV , P2004EV , P2060ZTF , P2060ZTFS , P2103HVG , P2103NVG , P2202CM , P2202CM6 , MMD60R360PRH , P2204ND5G , P2206BD , P2402OV , P2502IZG , P8008BD , P8008BDA , P8008BV , P8008BVA .
History: STP5N60M2
Keywords - P2202CV MOSFET datasheet
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History: STP5N60M2



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