All MOSFET. P2206BD Datasheet

 

P2206BD MOSFET. Datasheet pdf. Equivalent


   Type Designator: P2206BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.2 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: TO252

 P2206BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P2206BD Datasheet (PDF)

 ..1. Size:793K  unikc
 p2206bd.pdf

P2206BD P2206BD

P2206BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22.5m @VGS = 10V60V 32ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC= 25 C32IDContinuous Drain CurrentTC= 100 C20AIDM100Pulsed Drain Current1

 ..2. Size:365K  niko-sem
 p2206bd.pdf

P2206BD P2206BD

N-Channel Enhancement Mode P2206BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G60V 22.5m 32A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 8.1. Size:259K  niko-sem
 p2206bea.pdf

P2206BD P2206BD

P2206BEA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 20.8m 25A G. GATE D. DRAIN #1 S S S GS. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Vo

 8.2. Size:313K  niko-sem
 p2206bt.pdf

P2206BD P2206BD

N-Channel Enhancement Mode P2206BT NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G60V 22.5m 35A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 8.3. Size:299K  niko-sem
 p2206btf.pdf

P2206BD P2206BD

N-Channel Enhancement Mode P2206BTF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G60V 22.5m 28A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC =

 8.4. Size:246K  niko-sem
 p2206bv.pdf

P2206BD P2206BD

N-Channel Logic Level Enhancement Mode P2206BV NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m 60V 7A GG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE60N1K0F | PHP45N03LT

 

 
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