P2206BD Specs and Replacement
Type Designator: P2206BD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
Package: TO252
P2206BD substitution
- MOSFET ⓘ Cross-Reference Search
P2206BD datasheet
p2206bd.pdf
P2206BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m @VGS = 10V 60V 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 32 ID Continuous Drain Current TC= 100 C 20 A IDM 100 Pulsed Drain Current1... See More ⇒
p2206bd.pdf
N-Channel Enhancement Mode P2206BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 22.5m 32A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25 ... See More ⇒
p2206bea.pdf
P2206BEA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 20.8m 25A G. GATE D. DRAIN #1 S S S G S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Vo... See More ⇒
Detailed specifications: P2060ZTF, P2060ZTFS, P2103HVG, P2103NVG, P2202CM, P2202CM6, P2202CV, P2204ND5G, AON7403, P2402OV, P2502IZG, P8008BD, P8008BDA, P8008BV, P8008BVA, P8008HV, P8008HVA
Keywords - P2206BD MOSFET specs
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