All MOSFET. IRF1010ES Datasheet

 

IRF1010ES MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1010ES

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 83 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 130 nC

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: D2PAK

IRF1010ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1010ES Datasheet (PDF)

0.1. irf1010es.pdf Size:123K _international_rectifier

IRF1010ES
IRF1010ES

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175°C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12mΩ G Description Advanced HEXFET® Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achi

0.2. irf1010esl.pdf Size:196K _international_rectifier

IRF1010ES
IRF1010ES

PD - 9.1720 IRF1010ES/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature RDS(on) = 0.012Ω G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 0.3. irf1010elpbf irf1010espbf.pdf Size:222K _international_rectifier

IRF1010ES
IRF1010ES

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET® Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12mΩ l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International ID = 84A‡ S Rectifier utilize advanced pro

0.4. irf1010es.pdf Size:252K _inchange_semiconductor

IRF1010ES
IRF1010ES

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ES ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMU

Datasheet: IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , BUZ90 , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS .

 

 
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