All MOSFET. IRF1010ES Datasheet

 

IRF1010ES MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1010ES

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 84 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130(max) nC

Rise Time (tr): 78 nS

Drain-Source Capacitance (Cd): 690 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO263

IRF1010ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1010ES Datasheet (PDF)

..1. irf1010es.pdf Size:123K _international_rectifier

IRF1010ES
IRF1010ES

PD - 91720IRF1010ESIRF1010EL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche RatedRDS(on) = 12mGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 84A Rectifier utilize advanced processing techniques toSachi

..2. irf1010es.pdf Size:252K _inchange_semiconductor

IRF1010ES
IRF1010ES

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ESFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

0.1. irf1010esl.pdf Size:196K _international_rectifier

IRF1010ES
IRF1010ES

PD - 9.1720IRF1010ES/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating TemperatureRDS(on) = 0.012G Fast Switching Fully Avalanche RatedID = 83A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

0.2. irf1010elpbf irf1010espbf.pdf Size:222K _international_rectifier

IRF1010ES
IRF1010ES

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 0.3. irf1010espbf irf1010elpbf.pdf Size:222K _infineon

IRF1010ES
IRF1010ES

PD - 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

Datasheet: IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRFZ48N , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS .

 

 
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