PI632BZ Datasheet. Specs and Replacement
Type Designator: PI632BZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 404 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO251
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PI632BZ datasheet
pi632bz.pdf
PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3.7m @VGS = 10V 30V 105A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 105 ID Continuous Drain Current2 TC = 100 C 66 ... See More ⇒
pi632bz.pdf
N-Channel Enhancement Mode PI632BZ NIKO-SEM TO-251(IS) Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 2. DRAIN 30V 3.7m 105A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC... See More ⇒
Detailed specifications: PZ5203EMA, PZ5203QV, PZ558EZ, PE6B0SA, PF610BC, PF610BL, PF610HV, PI506BZ, 12N60, PJ614DA, PC015BD, PC015HV, P2B60AMA, P2E03BK, P4004ED, P4006DV, P4402FAG
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