All MOSFET. PI632BZ Datasheet

 

PI632BZ Datasheet and Replacement


   Type Designator: PI632BZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 404 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO251
 

 PI632BZ substitution

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PI632BZ Datasheet (PDF)

 ..1. Size:411K  unikc
 pi632bz.pdf pdf_icon

PI632BZ

PI632BZN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.7m @VGS = 10V30V 105A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C105IDContinuous Drain Current2TC = 100 C66

 ..2. Size:359K  niko-sem
 pi632bz.pdf pdf_icon

PI632BZ

N-Channel Enhancement Mode PI632BZ NIKO-SEM TO-251(IS) Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G2. DRAIN 30V 3.7m 105A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TC

Datasheet: PZ5203EMA , PZ5203QV , PZ558EZ , PE6B0SA , PF610BC , PF610BL , PF610HV , PI506BZ , 4N60 , PJ614DA , PC015BD , PC015HV , P2B60AMA , P2E03BK , P4004ED , P4006DV , P4402FAG .

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