P6015AV Datasheet. Specs and Replacement

Type Designator: P6015AV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 226 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP8

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P6015AV datasheet

 ..1. Size:342K  unikc
 p6015av.pdf pdf_icon

P6015AV

P6015AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 60m @VGS = 10V 5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TA = 25 C 5 ID Continuous Drain Current TA = 70 C 4 A IDM 22 Pulsed Drain Current1 I... See More ⇒

 8.1. Size:517K  unikc
 p6015ad.pdf pdf_icon

P6015AV

P6015AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 150V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 25 ID Continuous Drain Current TC = 100 C 16 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 20 ... See More ⇒

 8.2. Size:452K  unikc
 p6015at.pdf pdf_icon

P6015AV

P6015AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 150V 26A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 26 ID Continuous Drain Current TC = 100 C 16 A IDM 80 Pulsed Drain Current1 IAS Avalanche Current 21 EA... See More ⇒

 8.3. Size:321K  ncepower
 ncep6015as.pdf pdf_icon

P6015AV

http //www.ncepower.com NCEP6015AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS... See More ⇒

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Detailed specifications: P6006BD, P6006BI, P6006HV, P6010DDG, P6010DTFG, P6010DTG, P6015AD, P6015AT, IRFB3607, P6015CDG, P6015CSG, P6402FMG, P6403FMG, P6503FM, P6503FM6, P6503FMA, P6803HVG

Keywords - P6015AV MOSFET specs

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