All MOSFET. PE507BA Datasheet

 

PE507BA Datasheet and Replacement


   Type Designator: PE507BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 16 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: PDFN3X3P
 

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PE507BA Datasheet (PDF)

 ..1. Size:427K  1
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PE507BA

P-Channel Logic Level Enhancement Mode PE507BA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free DPRODUCT SUMMARY D D D DV(BR)DSS RDS(ON) ID 14m -42A -30V GG : GATE D : DRAIN S : SOURCE #1 S S S G SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30

 ..2. Size:539K  unikc
 pe507ba.pdf pdf_icon

PE507BA

PE507BAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = -10V-30V -28APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30 VVGSGate-Source Voltage 25 VTc = 25 C-28Tc = 100 C-18IDContinuous Drain Current3TA = 25

 ..3. Size:427K  niko-sem
 pe507ba.pdf pdf_icon

PE507BA

P-Channel Logic Level Enhancement Mode PE507BA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-free & Lead-Free DPRODUCT SUMMARY D D D DV(BR)DSS RDS(ON) ID 14m -42A -30V GG : GATE D : DRAIN S : SOURCE #1 S S S G SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30

Datasheet: PB544JU , PB554DY , PB555BA , PB560DZ , PB600BA , PB606BA , PE504BA , PE506BA , 5N60 , PE521BA , PE526BA , PE528BA , PE529BA , PE532DY , PE534BA , PE534SA , PE537BA .

History: BUK7M8R5-40H | DMP3013SFV

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